RHU003N03FRA Todos los transistores

 

RHU003N03FRA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RHU003N03FRA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: UMT3
 

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RHU003N03FRA Datasheet (PDF)

 ..1. Size:911K  rohm
 rhu003n03fra.pdf pdf_icon

RHU003N03FRA

RHU003N03FRARHU003N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHU003N03FRARHU003N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : MN

 5.1. Size:48K  rohm
 rhu003n03.pdf pdf_icon

RHU003N03FRA

RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : MN(3) Drain Packaging specifications Inn

 9.1. Size:60K  rohm
 rhu002n06.pdf pdf_icon

RHU003N03FRA

RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 External dimensions (Unit : mm) Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 1.255) Easily designed drive circuits. 2.16) Easy to use in parallel. 0.1Min.Each lead has same dimensions Structure Silicon N-channel Abbreviated symbol : KPMOSFET transisto

 9.2. Size:1034K  rohm
 rhu002n06fra.pdf pdf_icon

RHU003N03FRA

AEC-Q101 Qualified4V Drive Nch MOSFETRHU002N06FRAStructure Dimensions (Unit : mm)Silicon N-channelUMT3MOSFET transistor2.0 0.90.3 0.2 0.7(3)Features 1) Low on-resistance. (2) (1)2) High ESD. 0.65 0.653) High-speed switching. 0.151.34) Low-voltage drive (4V). (1) SourceEach lead has same dimensions5) Drive circuits can be simple. (2) GateAbb

MOSTRAR MÁS

Otros transistores... RHK003N06T146 , RHK005N03FRA , RHK005N03T146 , RHP020N06T100 , RHP030N03T100 , RHU002N06 , RHU002N06FRA , RHU003N03 , 13N50 , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA , RJK005N03T146 , RJK0323JPD , RJK0329DPB-00 , RJK0329DPB-01 , RJK0331DPB-00 .

History: UTC654 | IPB015N08N5 | SVF13N50S | AM30N08-80D | ME4953-G

 

 
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