RHU003N03FRA Datasheet. Specs and Replacement

Type Designator: RHU003N03FRA  📄📄 

Marking Code: MN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: UMT3

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RHU003N03FRA datasheet

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RHU003N03FRA

RHU003N03FRA RHU003N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHU003N03FRA RHU003N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol MN... See More ⇒

 5.1. Size:48K  rohm
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RHU003N03FRA

RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol MN (3) Drain Packaging specifications Inn... See More ⇒

 9.1. Size:60K  rohm
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RHU003N03FRA

RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 External dimensions (Unit mm) Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 1.25 5) Easily designed drive circuits. 2.1 6) Easy to use in parallel. 0.1Min. Each lead has same dimensions Structure Silicon N-channel Abbreviated symbol KP MOSFET transisto... See More ⇒

 9.2. Size:1034K  rohm
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RHU003N03FRA

AEC-Q101 Qualified 4V Drive Nch MOSFET RHU002N06FRA Structure Dimensions (Unit mm) Silicon N-channel UMT3 MOSFET transistor 2.0 0.9 0.3 0.2 0.7 (3) Features 1) Low on-resistance. (2) (1) 2) High ESD. 0.65 0.65 3) High-speed switching. 0.15 1.3 4) Low-voltage drive (4V). (1) Source Each lead has same dimensions 5) Drive circuits can be simple. (2) Gate Abb... See More ⇒

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Detailed specifications: RHK003N06T146, RHK005N03FRA, RHK005N03T146, RHP020N06T100, RHP030N03T100, RHU002N06, RHU002N06FRA, RHU003N03, TK10A60D, RJJ0601JPE, RJJ0601JPN, RJK005N03FRA, RJK005N03T146, RJK0323JPD, RJK0329DPB-00, RJK0329DPB-01, RJK0331DPB-00

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