RJK0323JPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0323JPD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 40 nC

Tiempo de elevación (tr): 300 nS

Conductancia de drenaje-sustrato (Cd): 470 pF

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: TO-252

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RJK0323JPD Datasheet (PDF)

1.1. rjk0323jpd.pdf Size:113K _update_mosfet

Preliminary Datasheet RJK0323JPD R07DS0334EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 7.0 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 2, 4 4 D 1

4.1. rjk0329dpb-00.pdf Size:124K _update_mosfet

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. r07ds0265ej rjk0329dpb.pdf Size:84K _renesas

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous: REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code

4.3. rjk0329dpb-01.pdf Size:81K _renesas

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous: REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline R

4.4. rej03g1637 rjk0328dpbds.pdf Size:135K _renesas