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RJK0323JPD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RJK0323JPD

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 40 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 30 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 40 nC

Время нарастания (tr): 300 ns

Выходная емкость (Cd): 470 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.009 Ohm

Тип корпуса: TO-252

Аналог (замена) для RJK0323JPD

 

RJK0323JPD Datasheet (PDF)

1.1. rjk0323jpd.pdf Size:113K _update_mosfet

RJK0323JPD
RJK0323JPD

 Preliminary Datasheet RJK0323JPD R07DS0334EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 7.0 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 2, 4 4 D 1

4.1. rjk0329dpb-00.pdf Size:124K _update_mosfet

RJK0323JPD
RJK0323JPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. rej03g1637 rjk0328dpbds.pdf Size:135K _renesas

RJK0323JPD
RJK0323JPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. rjk0329dpb-01.pdf Size:81K _renesas

RJK0323JPD
RJK0323JPD

 Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous: REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline R

4.4. r07ds0265ej rjk0329dpb.pdf Size:84K _renesas

RJK0323JPD
RJK0323JPD

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous: REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code

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