RJK0323JPD MOSFET. Datasheet pdf. Equivalent

   Type Designator: RJK0323JPD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 300 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252

RJK0323JPD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJK0323JPD Datasheet (PDF)

..1. Size:113K renesas
rjk0323jpd.pdf

Preliminary Datasheet RJK0323JPD R07DS0334EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Apr 18, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (S))2, 44D1

8.1. Size:135K renesas
rej03g1637 rjk0328dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. Size:81K renesas
rjk0329dpb-01.pdf

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500(Previous: REJ03G1638-0400)Silicon N Channel Power MOS FET Rev.5.00Power Switching Mar 01, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

8.3. Size:84K renesas
r07ds0265ej rjk0329dpb.pdf