All MOSFET. RJK0323JPD Datasheet

 

RJK0323JPD MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK0323JPD

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Rise Time (tr): 300 nS

Drain-Source Capacitance (Cd): 470 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO-252

RJK0323JPD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJK0323JPD Datasheet (PDF)

1.1. rjk0323jpd.pdf Size:113K _update_mosfet

RJK0323JPD
RJK0323JPD

 Preliminary Datasheet RJK0323JPD R07DS0334EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 7.0 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 2, 4 4 D 1

4.1. rjk0329dpb-00.pdf Size:124K _update_mosfet

RJK0323JPD
RJK0323JPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. rej03g1637 rjk0328dpbds.pdf Size:135K _renesas

RJK0323JPD
RJK0323JPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. rjk0329dpb-01.pdf Size:81K _renesas

RJK0323JPD
RJK0323JPD

 Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous: REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline R

4.4. r07ds0265ej rjk0329dpb.pdf Size:84K _renesas

RJK0323JPD
RJK0323JPD

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous: REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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