RJK0323JPD MOSFET Datasheet: N-Ch, 30V, 30A. Full specification with pinout and replacement list

RJK0323JPD Specs and Replacement

Type Designator: RJK0323JPD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

Cossⓘ - Output Capacitance: 470 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-252

RJK0323JPD substitution

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RJK0323JPD datasheet

..1. Size:113K renesas
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Preliminary Datasheet RJK0323JPD R07DS0334EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code PRSS0004ZD-C (Package name DPAK (S)) 2, 4 4 D 1... See More ⇒

8.1. Size:135K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

8.2. Size:81K renesas
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Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R... See More ⇒

8.3. Size:84K renesas
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