PHX3N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHX3N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm

Encapsulados: SOT186A

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PHX3N60E datasheet

 ..1. Size:73K  philips
 phx3n60e.pdf pdf_icon

PHX3N60E

Philips Semiconductors Product specification PowerMOS transistors PHX3N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.7 A g Isolated package RDS(ON) 4.4 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

 9.1. Size:72K  philips
 phx3n50e.pdf pdf_icon

PHX3N60E

Philips Semiconductors Product specification PowerMOS transistors PHX3N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2.1 A g Isolated package RDS(ON) 3 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan

 9.2. Size:63K  philips
 phx3n40e 3.pdf pdf_icon

PHX3N60E

Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 1.7 A g Isolated package RDS(ON) 3.5 s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

Otros transistores... PHW7N60E, PHW8N50E, PHW8ND50E, PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E, PHX3N50E, IRF1404, PHX4N60E, PHX4ND40E, PHX6N60E, PHX6NA60E, PHX6ND50E, PHX7N60E, PHX8N50E, PHX8ND50E