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PHX3N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHX3N60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
   Paquete / Cubierta: SOT186A
 

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PHX3N60E Datasheet (PDF)

 ..1. Size:73K  philips
 phx3n60e.pdf pdf_icon

PHX3N60E

Philips Semiconductors Product specification PowerMOS transistors PHX3N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.7 Ag Isolated packageRDS(ON) 4.4 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

 9.1. Size:72K  philips
 phx3n50e.pdf pdf_icon

PHX3N60E

Philips Semiconductors Product specification PowerMOS transistors PHX3N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2.1 Ag Isolated packageRDS(ON) 3 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan

 9.2. Size:63K  philips
 phx3n40e 3.pdf pdf_icon

PHX3N60E

Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 1.7 Ag Isolated packageRDS(ON) 3.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

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