All MOSFET. PHX3N60E Datasheet

 

 

PHX3N60E Datasheet and Replacement


   Type Designator: PHX3N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: SOT186A
 

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PHX3N60E Datasheet (PDF)

 ..1. Size:73K  philips
 phx3n60e.pdf pdf_icon

PHX3N60E

Philips Semiconductors Product specification PowerMOS transistors PHX3N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.7 Ag Isolated packageRDS(ON) 4.4 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

 9.1. Size:72K  philips
 phx3n50e.pdf pdf_icon

PHX3N60E

Philips Semiconductors Product specification PowerMOS transistors PHX3N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2.1 Ag Isolated packageRDS(ON) 3 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enhan

 9.2. Size:63K  philips
 phx3n40e 3.pdf pdf_icon

PHX3N60E

Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 1.7 Ag Isolated packageRDS(ON) 3.5 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

Datasheet: PHW7N60E , PHW8N50E , PHW8ND50E , PHW9N60E , PHX2N50E , PHX2N60E , PHX3N40E , PHX3N50E , IRF1404 , PHX4N60E , PHX4ND40E , PHX6N60E , PHX6NA60E , PHX6ND50E , PHX7N60E , PHX8N50E , PHX8ND50E .

History: PHX4N60E

Keywords - PHX3N60E MOSFET datasheet

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