RJK4532DPD Todos los transistores

 ..1. Size:72K  renesas
 rjk4532dpd.pdf

Preliminary Datasheet RJK4532DPD R07DS0682EJ0100 450V - 4A - MOS FET Rev.1.00 High Speed Power Switching Feb 24, 2012 Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source

 5.1. Size:89K  renesas
 rjk4532dph-e0.pdf

Preliminary Datasheet RJK4532DPH-E0 R07DS1038EJ0100 450V - 4A - MOS FET Rev.1.00 High Speed Power Switching Mar 15, 2013 Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source

 9.1. Size:88K  renesas
 rej03g1540 rjk4512dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:94K  renesas
 rjk4512dpp-e0.pdf

Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100 450V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1

 9.3. Size:80K  renesas
 rjk4502dpd.pdf

Preliminary Datasheet RJK4502DPD R07DS0865EJ0100 450V - 2.8A - MOS FET Rev.1.00 High Speed Power Switching Aug 08, 2012 Features Low on-state resistance RDS(on) = 3 typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Ab

 9.4. Size:78K  renesas
 r07ds0132ej rjk4518dpk.pdf

Preliminary Datasheet RJK4518DPK R07DS0132EJ0200 (Previous REJ03G1529-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Sep 08, 2010 Features Low on-resistance RDS(on) = 0.11 typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Ga

 9.5. Size:206K  renesas
 rej03g1514 rjk4514dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:94K  renesas
 rej03g1869 rjk4515dpkds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:92K  renesas
 rej03g1586 rjk4513dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:50K  renesas
 rjk4502dje.pdf

Preliminary Datasheet RJK4502DJE R07DS0843EJ0200 450V - 2.8A - MOS FET Rev.2.00 High Speed Power Switching Aug 10, 2012 Features Low on-state resistance RDS(on) = 3 typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25 C) High speed switching Outline RENESAS Package code PRSS0003DC-A (Package name TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1 Absolute Maxim