RJK4532DPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK4532DPD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 3.5 V
Qgⓘ - Carga de la puerta: 9 nC
trⓘ - Tiempo de subida: 4.5 nS
Cossⓘ - Capacitancia de salida: 36 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Paquete / Cubierta: MP-3A
Búsqueda de reemplazo de MOSFET RJK4532DPD
RJK4532DPD Datasheet (PDF)
rjk4532dpd.pdf
Preliminary Datasheet RJK4532DPD R07DS0682EJ0100450V - 4A - MOS FET Rev.1.00High Speed Power Switching Feb 24, 2012Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source
rjk4532dph-e0.pdf
Preliminary Datasheet RJK4532DPH-E0 R07DS1038EJ0100450V - 4A - MOS FET Rev.1.00High Speed Power Switching Mar 15, 2013Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source
rej03g1540 rjk4512dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk4512dpp-e0.pdf
Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100450V - 14A - MOS FET Rev.1.00High Speed Power Switching Feb 12, 2013Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1
rjk4502dpd.pdf
Preliminary Datasheet RJK4502DPD R07DS0865EJ0100450V - 2.8A - MOS FET Rev.1.00High Speed Power Switching Aug 08, 2012Features Low on-state resistance RDS(on) = 3 typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3SAb
r07ds0132ej rjk4518dpk.pdf
Preliminary Datasheet RJK4518DPK R07DS0132EJ0200(Previous: REJ03G1529-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Sep 08, 2010Features Low on-resistance RDS(on) = 0.11 typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Ga
rej03g1514 rjk4514dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1869 rjk4515dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1586 rjk4513dpeds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk4502dje.pdf
Preliminary DatasheetRJK4502DJE R07DS0843EJ0200450V - 2.8A - MOS FET Rev.2.00High Speed Power Switching Aug 10, 2012Features Low on-state resistance RDS(on) = 3 typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321Absolute Maxim
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