RJK4532DPD. Аналоги и основные параметры

Наименование производителя: RJK4532DPD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 450 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4.5 ns

Cossⓘ - Выходная емкость: 36 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm

Тип корпуса: MP-3A

Аналог (замена) для RJK4532DPD

- подборⓘ MOSFET транзистора по параметрам

 

RJK4532DPD даташит

 ..1. Size:72K  renesas
rjk4532dpd.pdfpdf_icon

RJK4532DPD

Preliminary Datasheet RJK4532DPD R07DS0682EJ0100 450V - 4A - MOS FET Rev.1.00 High Speed Power Switching Feb 24, 2012 Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source

 5.1. Size:89K  renesas
rjk4532dph-e0.pdfpdf_icon

RJK4532DPD

Preliminary Datasheet RJK4532DPH-E0 R07DS1038EJ0100 450V - 4A - MOS FET Rev.1.00 High Speed Power Switching Mar 15, 2013 Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source

 9.1. Size:88K  renesas
rej03g1540 rjk4512dpeds.pdfpdf_icon

RJK4532DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:94K  renesas
rjk4512dpp-e0.pdfpdf_icon

RJK4532DPD

Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100 450V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1

Другие IGBT... RJK2075DPA, RJK2076DPA, RJK4002DJE, RJK4002DPD, RJK4034DJE, RJK4502DJE, RJK4502DPD, RJK4512DPP-E0, AON6414A, RJK4532DPH-E0, RJK5002DJE, RJK5002DPD, RJK5013DPP-E0, RJK5014DPP, RJK5014DPP-E0, RJK5032DPD, RJK5032DPH-E0