All MOSFET. RJK4532DPD Datasheet

 

RJK4532DPD Datasheet and Replacement


   Type Designator: RJK4532DPD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: MP-3A
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RJK4532DPD Datasheet (PDF)

 ..1. Size:72K  renesas
rjk4532dpd.pdf pdf_icon

RJK4532DPD

Preliminary Datasheet RJK4532DPD R07DS0682EJ0100450V - 4A - MOS FET Rev.1.00High Speed Power Switching Feb 24, 2012Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source

 5.1. Size:89K  renesas
rjk4532dph-e0.pdf pdf_icon

RJK4532DPD

Preliminary Datasheet RJK4532DPH-E0 R07DS1038EJ0100450V - 4A - MOS FET Rev.1.00High Speed Power Switching Mar 15, 2013Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source

 9.1. Size:88K  renesas
rej03g1540 rjk4512dpeds.pdf pdf_icon

RJK4532DPD

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:94K  renesas
rjk4512dpp-e0.pdf pdf_icon

RJK4532DPD

Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100450V - 14A - MOS FET Rev.1.00High Speed Power Switching Feb 12, 2013Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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