RJK5014DPP-E0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK5014DPP-E0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 41 nS
Cossⓘ - Capacitancia de salida: 190 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de RJK5014DPP-E0 MOSFET
RJK5014DPP-E0 PDF Specs
rjk5014dpp-e0.pdf
Preliminary Datasheet RJK5014DPP-E0 R07DS0607EJ0100 500V - 19A - MOS FET Rev.1.00 High Speed Power Switching Feb 03, 2012 Features Low on-resistance RDS(on) = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source... See More ⇒
rjk5014dpp.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g1458 rjk5014dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
r07ds0487ej rjk5013dpe.pdf
Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) ... See More ⇒
Otros transistores... RJK4502DPD , RJK4512DPP-E0 , RJK4532DPD , RJK4532DPH-E0 , RJK5002DJE , RJK5002DPD , RJK5013DPP-E0 , RJK5014DPP , IRFP250N , RJK5032DPD , RJK5032DPH-E0 , RJK6002DJE , RJK6002DPH-E0 , RJK6013DPP-E0 , RJK6024DP3-A0 , RJK6025DPH-E0 , RJK6032DPH-E0 .
History: BSC009NE2LS5
History: BSC009NE2LS5
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