RJK5014DPP-E0. Аналоги и основные параметры
Наименование производителя: RJK5014DPP-E0
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 41 ns
Cossⓘ - Выходная емкость: 190 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.39 Ohm
Тип корпуса: TO-220FP
Аналог (замена) для RJK5014DPP-E0
- подборⓘ MOSFET транзистора по параметрам
RJK5014DPP-E0 даташит
rjk5014dpp-e0.pdf
Preliminary Datasheet RJK5014DPP-E0 R07DS0607EJ0100 500V - 19A - MOS FET Rev.1.00 High Speed Power Switching Feb 03, 2012 Features Low on-resistance RDS(on) = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source
rjk5014dpp.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1458 rjk5014dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0487ej rjk5013dpe.pdf
Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) )
Другие IGBT... RJK4502DPD, RJK4512DPP-E0, RJK4532DPD, RJK4532DPH-E0, RJK5002DJE, RJK5002DPD, RJK5013DPP-E0, RJK5014DPP, IRFP250N, RJK5032DPD, RJK5032DPH-E0, RJK6002DJE, RJK6002DPH-E0, RJK6013DPP-E0, RJK6024DP3-A0, RJK6025DPH-E0, RJK6032DPH-E0
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Список транзисторов
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