RJK5014DPP-E0 Specs and Replacement

Type Designator: RJK5014DPP-E0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm

Package: TO-220FP

RJK5014DPP-E0 substitution

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RJK5014DPP-E0 datasheet

 ..1. Size:79K  renesas
rjk5014dpp-e0.pdf pdf_icon

RJK5014DPP-E0

Preliminary Datasheet RJK5014DPP-E0 R07DS0607EJ0100 500V - 19A - MOS FET Rev.1.00 High Speed Power Switching Feb 03, 2012 Features Low on-resistance RDS(on) = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source... See More ⇒

 4.1. Size:208K  renesas
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RJK5014DPP-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 5.1. Size:119K  renesas
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RJK5014DPP-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:83K  renesas
r07ds0487ej rjk5013dpe.pdf pdf_icon

RJK5014DPP-E0

Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 (Previous REJ03G1488-0200) Silicon N Channel MOS FET Rev.3.00 Jun 29, 2011 High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) ... See More ⇒

Detailed specifications: RJK4502DPD, RJK4512DPP-E0, RJK4532DPD, RJK4532DPH-E0, RJK5002DJE, RJK5002DPD, RJK5013DPP-E0, RJK5014DPP, IRFP250N, RJK5032DPD, RJK5032DPH-E0, RJK6002DJE, RJK6002DPH-E0, RJK6013DPP-E0, RJK6024DP3-A0, RJK6025DPH-E0, RJK6032DPH-E0

Keywords - RJK5014DPP-E0 MOSFET specs

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