RJK5032DPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK5032DPD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40.3 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 9.2 nC

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 33 pF

Resistencia drenaje-fuente RDS(on): 2.8 Ohm

Empaquetado / Estuche: MP-3A

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RJK5032DPD Datasheet (PDF)

1.1. rjk5032dpd.pdf Size:79K _renesas

Preliminary Datasheet RJK5032DPD R07DS0836EJ0200 500V - 3A - MOS FET Rev.2.00 High Speed Power Switching Aug 08, 2012 Features  Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source

1.2. rjk5032dph-e0.pdf Size:89K _renesas

Preliminary Datasheet RJK5032DPH-E0 R07DS1039EJ0100 500V - 3A - MOS FET Rev.1.00 High Speed Power Switching Mar 15, 2013 Features  Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) D 4 1. Gate 2. Drain G 3. Source

4.1. r07ds0417ej rjk5031dpd.pdf Size:94K _renesas

Preliminary Datasheet RJK5031DPD R07DS0417EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 23, 2011 Features � Low on-state resistance RDS(on) = 2.4 ? typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25�C) � High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolut

4.2. r07ds0179ej rjk5033dpd.pdf Size:70K _renesas

Preliminary Datasheet RJK5033DPD R07DS0179EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 05, 2010 Features ? Low on-state resistance RDS(on) = 0.96 ? typ. (ID = 3 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolute Ma

4.3. r07ds0050ej rjk5030dpd.pdf Size:68K _renesas

Preliminary Datasheet RJK5030DPD R07DS0050EJ0200 (Previous: REJ03G1913-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2010 Features ? Low on-state resistance RDS(on) = 1.3 ? typ. (at ID = 2 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1

4.4. r07ds0227ej rjk5030dpp.pdf Size:77K _renesas

Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features ? Low on-state resistance RDS(on) = 1.3 ? typ. (at ID = 2 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum

4.5. r07ds0205ej rjk5033dpp.pdf Size:78K _renesas

Preliminary Datasheet RJK5033DPP-M0 R07DS0205EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Nov 29, 2010 Features ? Low on-state resistance RDS(on) = 0.96 ? typ. (at ID = 3 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum

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