RJK5032DPD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK5032DPD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 40.3 W
Tensión drenaje-fuente (Vds): 500 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 9.2 nC
Tiempo de elevación (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 33 pF
Resistencia drenaje-fuente RDS(on): 2.8 Ohm
Empaquetado / Estuche: MP-3A
Búsqueda de reemplazo de MOSFET RJK5032DPD
RJK5032DPD Datasheet (PDF)
1.1. rjk5032dph-e0.pdf 
Size:89K _renesas
Preliminary Datasheet RJK5032DPH-E0 R07DS1039EJ0100 500V - 3A - MOS FET Rev.1.00 High Speed Power Switching Mar 15, 2013 Features Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) D 4 1. Gate 2. Drain G 3. Source
1.2. rjk5032dpd.pdf Size:79K _renesas
Preliminary Datasheet RJK5032DPD R07DS0836EJ0200 500V - 3A - MOS FET Rev.2.00 High Speed Power Switching Aug 08, 2012 Features Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source
4.1. r07ds0205ej rjk5033dpp.pdf Size:78K _renesas
Preliminary Datasheet RJK5033DPP-M0 R07DS0205EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Nov 29, 2010 Features ? Low on-state resistance RDS(on) = 0.96 ? typ. (at ID = 3 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum
4.2. r07ds0050ej rjk5030dpd.pdf Size:68K _renesas
Preliminary Datasheet RJK5030DPD R07DS0050EJ0200 (Previous: REJ03G1913-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 22, 2010 Features ? Low on-state resistance RDS(on) = 1.3 ? typ. (at ID = 2 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1
4.3. r07ds0227ej rjk5030dpp.pdf Size:77K _renesas
Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Dec 14, 2010 Features ? Low on-state resistance RDS(on) = 1.3 ? typ. (at ID = 2 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source 1 2 3 S Absolute Maximum
4.4. r07ds0179ej rjk5033dpd.pdf Size:70K _renesas
Preliminary Datasheet RJK5033DPD R07DS0179EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Oct 05, 2010 Features ? Low on-state resistance RDS(on) = 0.96 ? typ. (ID = 3 A, VGS = 10 V, Ta = 25?C) ? High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolute Ma
4.5. r07ds0417ej rjk5031dpd.pdf Size:94K _renesas
Preliminary Datasheet RJK5031DPD R07DS0417EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 23, 2011 Features Low on-state resistance RDS(on) = 2.4 ? typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-A D (Package name : MP-3A) 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S Absolut
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