RJK5032DPD
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK5032DPD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.2
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 33
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8
Ohm
Package: MP-3A
RJK5032DPD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK5032DPD
Datasheet (PDF)
..1. Size:79K renesas
rjk5032dpd.pdf 
Preliminary Datasheet RJK5032DPD R07DS0836EJ0200500V - 3A - MOS FET Rev.2.00High Speed Power Switching Aug 08, 2012Features Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source
5.1. Size:89K renesas
rjk5032dph-e0.pdf
Preliminary Datasheet RJK5032DPH-E0 R07DS1039EJ0100500V - 3A - MOS FET Rev.1.00High Speed Power Switching Mar 15, 2013Features Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source
8.1. Size:94K renesas
r07ds0417ej rjk5031dpd.pdf
Preliminary Datasheet RJK5031DPD R07DS0417EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 23, 2011Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3S
8.2. Size:70K renesas
r07ds0179ej rjk5033dpd.pdf
Preliminary Datasheet RJK5033DPD R07DS0179EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Oct 05, 2010Features Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3S
8.3. Size:78K renesas
r07ds0205ej rjk5033dpp.pdf
Preliminary Datasheet RJK5033DPP-M0 R07DS0205EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Nov 29, 2010Features Low on-state resistance RDS(on) = 0.96 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsol
8.4. Size:77K renesas
r07ds0227ej rjk5030dpp.pdf
Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 14, 2010Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolu
8.5. Size:68K renesas
r07ds0050ej rjk5030dpd.pdf
Preliminary Datasheet RJK5030DPD R07DS0050EJ0200(Previous: REJ03G1913-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jul 22, 2010Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3.
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
