Справочник MOSFET. RJK5032DPD

 

RJK5032DPD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK5032DPD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.2 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 33 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm
   Тип корпуса: MP-3A

 Аналог (замена) для RJK5032DPD

 

 

RJK5032DPD Datasheet (PDF)

 ..1. Size:79K  renesas
 rjk5032dpd.pdf

RJK5032DPD RJK5032DPD

Preliminary Datasheet RJK5032DPD R07DS0836EJ0200500V - 3A - MOS FET Rev.2.00High Speed Power Switching Aug 08, 2012Features Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source

 5.1. Size:89K  renesas
 rjk5032dph-e0.pdf

RJK5032DPD RJK5032DPD

Preliminary Datasheet RJK5032DPH-E0 R07DS1039EJ0100500V - 3A - MOS FET Rev.1.00High Speed Power Switching Mar 15, 2013Features Low on-state resistance RDS(on) = 2.1 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source

 8.1. Size:94K  renesas
 r07ds0417ej rjk5031dpd.pdf

RJK5032DPD RJK5032DPD

Preliminary Datasheet RJK5031DPD R07DS0417EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 23, 2011Features Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3S

 8.2. Size:70K  renesas
 r07ds0179ej rjk5033dpd.pdf

RJK5032DPD RJK5032DPD

Preliminary Datasheet RJK5033DPD R07DS0179EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Oct 05, 2010Features Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3S

 8.3. Size:78K  renesas
 r07ds0205ej rjk5033dpp.pdf

RJK5032DPD RJK5032DPD

Preliminary Datasheet RJK5033DPP-M0 R07DS0205EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Nov 29, 2010Features Low on-state resistance RDS(on) = 0.96 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsol

 8.4. Size:77K  renesas
 r07ds0227ej rjk5030dpp.pdf

RJK5032DPD RJK5032DPD

Preliminary Datasheet RJK5030DPP-M0 R07DS0227EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Dec 14, 2010Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolu

 8.5. Size:68K  renesas
 r07ds0050ej rjk5030dpd.pdf

RJK5032DPD RJK5032DPD

Preliminary Datasheet RJK5030DPD R07DS0050EJ0200(Previous: REJ03G1913-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jul 22, 2010Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3.

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