RJU003N03T106 Todos los transistores

 

RJU003N03T106 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJU003N03T106
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: UMT3
 

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RJU003N03T106 Datasheet (PDF)

 ..1. Size:216K  rohm
 rju003n03t106.pdf pdf_icon

RJU003N03T106

2.5V Drive Nch MOSFET RJU003N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : LPSwitching (3) Drain Packaging specifications and hFE Inner circu

 5.1. Size:1021K  rohm
 rju003n03fra.pdf pdf_icon

RJU003N03T106

AEC-Q101 Qualified2.5V Drive Nch MOSFET RJU003N03 RJU003N03FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : LPSwitching (3) Drain Packaging sp

 9.1. Size:41K  rohm
 rju002n06t106.pdf pdf_icon

RJU003N03T106

RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : ML(3) Drain Packa

 9.2. Size:1020K  rohm
 rju002n06fra.pdf pdf_icon

RJU003N03T106

AEC-Q101 Qualified2.5V Drive Nch MOSFET RJU002N06 RJU002N06FRA Structure Dimensions (Unit : mm)Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : MLSwitching (3) Drain Packaging s

MOSTRAR MÁS

Otros transistores... RJL6013DPP , RJL6014DPP , RJM0404JSC , RJM0603JSC , RJP020N06T100 , RJU002N06FRA , RJU002N06T106 , RJU003N03FRA , IRFB3607 , RK3055ETL , RK7002AT116 , RK7002BM , RK7002BT116 , RK7002T116 , RND030N20 , RP1A090ZPTR , RP1E050RPTR .

History: AP9976GM | AP9980GH-HF

 

 
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