RJU003N03T106 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJU003N03T106

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 11 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: UMT3

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RJU003N03T106 datasheet

 ..1. Size:216K  rohm
 rju003n03t106.pdf pdf_icon

RJU003N03T106

2.5V Drive Nch MOSFET RJU003N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol LP Switching (3) Drain Packaging specifications and hFE Inner circu

 5.1. Size:1021K  rohm
 rju003n03fra.pdf pdf_icon

RJU003N03T106

AEC-Q101 Qualified 2.5V Drive Nch MOSFET RJU003N03 RJU003N03FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol LP Switching (3) Drain Packaging sp

 9.1. Size:41K  rohm
 rju002n06t106.pdf pdf_icon

RJU003N03T106

RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol ML (3) Drain Packa

 9.2. Size:1020K  rohm
 rju002n06fra.pdf pdf_icon

RJU003N03T106

AEC-Q101 Qualified 2.5V Drive Nch MOSFET RJU002N06 RJU002N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol ML Switching (3) Drain Packaging s

MOSTRAR MÁS

Otros transistores... RJL6013DPP, RJL6014DPP, RJM0404JSC, RJM0603JSC, RJP020N06T100, RJU002N06FRA, RJU002N06T106, RJU003N03FRA, IRFB3607, RK3055ETL, RK7002AT116, RK7002BM, RK7002BT116, RK7002T116, RND030N20, RP1A090ZPTR, RP1E050RPTR