RJU003N03T106 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RJU003N03T106
   Código: LP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: UMT3

Búsqueda de reemplazo de MOSFET RJU003N03T106

RJU003N03T106 Datasheet (PDF)

..1. Size:216K rohm
rju003n03t106.pdf

2.5V Drive Nch MOSFET RJU003N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : LPSwitching (3) Drain Packaging specifications and hFE Inner circu

5.1. Size:1021K rohm
rju003n03fra.pdf

AEC-Q101 Qualified2.5V Drive Nch MOSFET RJU003N03 RJU003N03FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : LPSwitching (3) Drain Packaging sp

9.1. Size:41K rohm
rju002n06t106.pdf

RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : ML(3) Drain Packa

9.2. Size:1020K rohm
rju002n06fra.pdf

AEC-Q101 Qualified2.5V Drive Nch MOSFET RJU002N06 RJU002N06FRA Structure Dimensions (Unit : mm)Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : MLSwitching (3) Drain Packaging s

9.3. Size:145K rohm
rju002n06.pdf

2.5V Drive Nch MOSFET RJU002N06 Structure Dimensions (Unit : mm) Silicon N-channel MOS FET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateAbbreviated symbol : MLSwitching (3) Drain Packaging specifications Inner circuit (3

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