RJU003N03T106 Specs and Replacement

Type Designator: RJU003N03T106

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: UMT3

RJU003N03T106 substitution

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RJU003N03T106 datasheet

 ..1. Size:216K  rohm
 rju003n03t106.pdf pdf_icon

RJU003N03T106

2.5V Drive Nch MOSFET RJU003N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol LP Switching (3) Drain Packaging specifications and hFE Inner circu... See More ⇒

 5.1. Size:1021K  rohm
 rju003n03fra.pdf pdf_icon

RJU003N03T106

AEC-Q101 Qualified 2.5V Drive Nch MOSFET RJU003N03 RJU003N03FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol LP Switching (3) Drain Packaging sp... See More ⇒

 9.1. Size:41K  rohm
 rju002n06t106.pdf pdf_icon

RJU003N03T106

RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol ML (3) Drain Packa... See More ⇒

 9.2. Size:1020K  rohm
 rju002n06fra.pdf pdf_icon

RJU003N03T106

AEC-Q101 Qualified 2.5V Drive Nch MOSFET RJU002N06 RJU002N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol ML Switching (3) Drain Packaging s... See More ⇒

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Detailed specifications: RJL6013DPP, RJL6014DPP, RJM0404JSC, RJM0603JSC, RJP020N06T100, RJU002N06FRA, RJU002N06T106, RJU003N03FRA, IRFB3607, RK3055ETL, RK7002AT116, RK7002BM, RK7002BT116, RK7002T116, RND030N20, RP1A090ZPTR, RP1E050RPTR

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