RK7002T116 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TransistorsInterface and switching(60V, 115mA)RK7002FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Low-voltage drive.4) Easily designed drive circuits.5) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit186Transistors RK7002FElectrical characteristics (Ta = 25_C

2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SST3Features1) High speed switing.2) Small package(SST3).3) Low voltage drive(2.5V drive).Abbreviated symbol : RKT ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T116Basic ordering unit (pieces) 3000RK7002B

2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SST3Features1) High speed switing.2) Small package(SST3).3) Low voltage drive(2.5V drive).Abbreviated symbol : RKT ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T116Basic ordering unit (pieces) 3000RK7002B

RK7002BMHZGDatasheetNch 60V 250mA Small Signal MOSFETAEC-Q101 QualifiedlOutlinel SOT-23VDSS60V SST3RDS(on)(Max.)2.4ID250mAPD350mW lInner circuitllFeaturesl1) Very fast switching2) Ultra low voltage drive (2.5V drive)3) ESD protection up to 2kV (HBM)4) Pb-free lead plating ; RoHS compliant.5)

RK7002ATransistorsSwitching (60V, 300mA)RK7002A Features External dimensions (Units : mm)1) Low on-resistance.2) High ESD3) High-speed switching.4) Low-voltage drive (4V).5) Easily designed drive circuits.1.36) Easy to use in parallel.2.4 StructureEach lead has same dimensionsSilicon N-channelMOSFET transistorROHM : SST3 (1) SourceAbbreviated symbol : RKS(2

TransistorsInterface and switching(60V, 115mA)RK7002FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Low-voltage drive.4) Easily designed drive circuits.5) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit186Transistors RK7002FElectrical characteristics (Ta = 25_C

2.5V Drive Nch MOSFETRK7002BM DatasheetStructure Dimensions (Unit : mm)Silicon N-channel MOSFET SST3Features1) High speed switing.2) Small package(SST3).3) Low voltage drive(2.5V drive).Abbreviated symbol : RKUApplicationSwitchingPackaging specifications Inner circuit(3)Package TapingTypeCode T116Basic ordering unit (pieces) 3000RK7

FM120-M WILLASTHRUSRK7002LT1Small Signal MOSFET BARRIER RECTIFIERS -20V- 200VSilicon N-ChannelFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

LESHAN RADIO COMPANY, LTD.SRK7002LT1GSmall Signal MOSFETS-SRK7002LT1GSilicon N-Channel3 Features11) Low on-resistance.22) Fast switching speed.3) Low-voltage drive.SOT-23 (TO-236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.3d7) ESD Protected:2000V8) S- Prefix for Automotive and Other Applications Requiring Uniqu

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETLRK7002WT1GSilicon N-Channel3 Features11) Low on-resistance.22) Fast switching speed.3) Low-voltage drive.SOT-23 (TO-236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.3 Device Marking and Ordering Information1Device Marking Shipping6C 3000/Tape&Reel6CLRK7002WT1GG

LESHAN RADIO COMPANY, LTD.DUAL N-CHANNEL ENHANCEMENT SSRK7002LT1GMODE FIELD EFFECT TRANSISTOR 3Low On-Resistance Fast Switching Speed 1Low-voltage drive 2Easily designed drive circuits SOT-23Pb-Free Package is available. The suffix G means Pb-free package 3ESD Protected:1000VOrdering Information(Pb-free) 1Device Marking Shipping SSRK7002LT1G RS 30