RK7002T116 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RK7002T116

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.225 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.115 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm

Encapsulados: SOT-23

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RK7002T116 datasheet

 ..1. Size:109K  rohm
rk7002t116.pdf pdf_icon

RK7002T116

Transistors Interface and switching (60V, 115mA) RK7002 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit 186 Transistors RK7002 FElectrical characteristics (Ta = 25_C

 8.1. Size:212K  rohm
rk7002bt116.pdf pdf_icon

RK7002T116

2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit mm) Silicon N-channel MOSFET SST3 Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol RKT Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T116 Basic ordering unit (pieces) 3000 RK7002B

 8.2. Size:233K  rohm
rk7002b.pdf pdf_icon

RK7002T116

2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit mm) Silicon N-channel MOSFET SST3 Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol RKT Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T116 Basic ordering unit (pieces) 3000 RK7002B

 8.3. Size:1623K  rohm
rk7002bmhzg.pdf pdf_icon

RK7002T116

RK7002BMHZG Datasheet Nch 60V 250mA Small Signal MOSFET AEC-Q101 Qualified lOutline l SOT-23 VDSS 60V SST3 RDS(on)(Max.) 2.4 ID 250mA PD 350mW lInner circuit l lFeatures l 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5)

Otros transistores... RJU002N06FRA, RJU002N06T106, RJU003N03FRA, RJU003N03T106, RK3055ETL, RK7002AT116, RK7002BM, RK7002BT116, AON7506, RND030N20, RP1A090ZPTR, RP1E050RPTR, RP1E090RPTR, RP1E100RPTR, RQ1A060ZPTR, RQ1A070ZPTR, RQ1E050RPTR