Справочник MOSFET. RK7002T116

 

RK7002T116 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RK7002T116
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.225 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.115 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 10 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7.5 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для RK7002T116

 

 

RK7002T116 Datasheet (PDF)

 ..1. Size:109K  rohm
rk7002t116.pdf

RK7002T116 RK7002T116

TransistorsInterface and switching(60V, 115mA)RK7002FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Low-voltage drive.4) Easily designed drive circuits.5) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit186Transistors RK7002FElectrical characteristics (Ta = 25_C

 8.1. Size:212K  rohm
rk7002bt116.pdf

RK7002T116 RK7002T116

2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SST3Features1) High speed switing.2) Small package(SST3).3) Low voltage drive(2.5V drive).Abbreviated symbol : RKT ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T116Basic ordering unit (pieces) 3000RK7002B

 8.2. Size:233K  rohm
rk7002b.pdf

RK7002T116 RK7002T116

2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SST3Features1) High speed switing.2) Small package(SST3).3) Low voltage drive(2.5V drive).Abbreviated symbol : RKT ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T116Basic ordering unit (pieces) 3000RK7002B

 8.3. Size:1623K  rohm
rk7002bmhzg.pdf

RK7002T116 RK7002T116

RK7002BMHZGDatasheetNch 60V 250mA Small Signal MOSFETAEC-Q101 QualifiedlOutlinel SOT-23VDSS60V SST3RDS(on)(Max.)2.4ID250mAPD350mW lInner circuitllFeaturesl1) Very fast switching2) Ultra low voltage drive (2.5V drive)3) ESD protection up to 2kV (HBM)4) Pb-free lead plating ; RoHS compliant.5)

 8.4. Size:80K  rohm
rk7002at116.pdf

RK7002T116 RK7002T116

RK7002ATransistorsSwitching (60V, 300mA)RK7002A Features External dimensions (Units : mm)1) Low on-resistance.2) High ESD3) High-speed switching.4) Low-voltage drive (4V).5) Easily designed drive circuits.1.36) Easy to use in parallel.2.4 StructureEach lead has same dimensionsSilicon N-channelMOSFET transistorROHM : SST3 (1) SourceAbbreviated symbol : RKS(2

 8.5. Size:112K  rohm
rk7002.pdf

RK7002T116 RK7002T116

TransistorsInterface and switching(60V, 115mA)RK7002FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Low-voltage drive.4) Easily designed drive circuits.5) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit186Transistors RK7002FElectrical characteristics (Ta = 25_C

 8.6. Size:276K  rohm
rk7002bm.pdf

RK7002T116 RK7002T116

2.5V Drive Nch MOSFETRK7002BM DatasheetStructure Dimensions (Unit : mm)Silicon N-channel MOSFET SST3Features1) High speed switing.2) Small package(SST3).3) Low voltage drive(2.5V drive).Abbreviated symbol : RKUApplicationSwitchingPackaging specifications Inner circuit(3)Package TapingTypeCode T116Basic ordering unit (pieces) 3000RK7

 8.7. Size:401K  willas
srk7002lt1.pdf

RK7002T116 RK7002T116

FM120-M WILLASTHRUSRK7002LT1Small Signal MOSFET BARRIER RECTIFIERS -20V- 200VSilicon N-ChannelFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

 8.8. Size:180K  lrc
srk7002lt1g.pdf

RK7002T116 RK7002T116

LESHAN RADIO COMPANY, LTD.SRK7002LT1GSmall Signal MOSFETS-SRK7002LT1GSilicon N-Channel3 Features11) Low on-resistance.22) Fast switching speed.3) Low-voltage drive.SOT-23 (TO-236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.3d7) ESD Protected:2000V8) S- Prefix for Automotive and Other Applications Requiring Uniqu

 8.9. Size:400K  lrc
lrk7002wt1g.pdf

RK7002T116 RK7002T116

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETLRK7002WT1GSilicon N-Channel3 Features11) Low on-resistance.22) Fast switching speed.3) Low-voltage drive.SOT-23 (TO-236AB)4) Easily designed drive circuits.5) Easy to parallel.6) Pb-Free package is available.3 Device Marking and Ordering Information1Device Marking Shipping6C 3000/Tape&Reel6CLRK7002WT1GG

 8.10. Size:344K  lrc
srk7002lt1g s-srk7002lt1g.pdf

RK7002T116

 8.11. Size:432K  lrc
ssrk7002lt1g.pdf

RK7002T116 RK7002T116

LESHAN RADIO COMPANY, LTD.DUAL N-CHANNEL ENHANCEMENT SSRK7002LT1GMODE FIELD EFFECT TRANSISTOR 3Low On-Resistance Fast Switching Speed 1Low-voltage drive 2Easily designed drive circuits SOT-23Pb-Free Package is available. The suffix G means Pb-free package 3ESD Protected:1000VOrdering Information(Pb-free) 1Device Marking Shipping SSRK7002LT1G RS 30

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