RK7002T116 Specs and Replacement
Type Designator: RK7002T116
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ -
Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT-23
- MOSFET ⓘ Cross-Reference Search
RK7002T116 datasheet
..1. Size:109K rohm
rk7002t116.pdf 
Transistors Interface and switching (60V, 115mA) RK7002 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit 186 Transistors RK7002 FElectrical characteristics (Ta = 25_C... See More ⇒
8.1. Size:212K rohm
rk7002bt116.pdf 
2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit mm) Silicon N-channel MOSFET SST3 Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol RKT Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T116 Basic ordering unit (pieces) 3000 RK7002B ... See More ⇒
8.2. Size:233K rohm
rk7002b.pdf 
2.5V Drive Nch MOSFET RK7002B Structure Dimensions (Unit mm) Silicon N-channel MOSFET SST3 Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol RKT Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T116 Basic ordering unit (pieces) 3000 RK7002B ... See More ⇒
8.3. Size:1623K rohm
rk7002bmhzg.pdf 
RK7002BMHZG Datasheet Nch 60V 250mA Small Signal MOSFET AEC-Q101 Qualified lOutline l SOT-23 VDSS 60V SST3 RDS(on)(Max.) 2.4 ID 250mA PD 350mW lInner circuit l lFeatures l 1) Very fast switching 2) Ultra low voltage drive (2.5V drive) 3) ESD protection up to 2kV (HBM) 4) Pb-free lead plating ; RoHS compliant. 5)... See More ⇒
8.4. Size:80K rohm
rk7002at116.pdf 
RK7002A Transistors Switching (60V, 300mA) RK7002A Features External dimensions (Units mm) 1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 1.3 6) Easy to use in parallel. 2.4 Structure Each lead has same dimensions Silicon N-channel MOSFET transistor ROHM SST3 (1) Source Abbreviated symbol RKS (2... See More ⇒
8.5. Size:112K rohm
rk7002.pdf 
Transistors Interface and switching (60V, 115mA) RK7002 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit 186 Transistors RK7002 FElectrical characteristics (Ta = 25_C... See More ⇒
8.6. Size:276K rohm
rk7002bm.pdf 
2.5V Drive Nch MOSFET RK7002BM Datasheet Structure Dimensions (Unit mm) Silicon N-channel MOSFET SST3 Features 1) High speed switing. 2) Small package(SST3). 3) Low voltage drive(2.5V drive). Abbreviated symbol RKU Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T116 Basic ordering unit (pieces) 3000 RK7... See More ⇒
8.7. Size:401K willas
srk7002lt1.pdf 
FM120-M WILLAS THRU SRK7002LT1 Small Signal MOSFET BARRIER RECTIFIERS -20V- 200V Silicon N-Channel FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to o... See More ⇒
8.8. Size:180K lrc
srk7002lt1g.pdf 
LESHAN RADIO COMPANY, LTD. SRK7002LT1G Small Signal MOSFET S-SRK7002LT1G Silicon N-Channel 3 Features 1 1) Low on-resistance. 2 2) Fast switching speed. 3) Low-voltage drive. SOT-23 (TO-236AB) 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 3 d 7) ESD Protected 2000V 8) S- Prefix for Automotive and Other Applications Requiring Uniqu... See More ⇒
8.9. Size:400K lrc
lrk7002wt1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LRK7002WT1G Silicon N-Channel 3 Features 1 1) Low on-resistance. 2 2) Fast switching speed. 3) Low-voltage drive. SOT-23 (TO-236AB) 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 3 Device Marking and Ordering Information 1 Device Marking Shipping 6C 3000/Tape&Reel 6C LRK7002WT1G G... See More ⇒
8.11. Size:432K lrc
ssrk7002lt1g.pdf 
LESHAN RADIO COMPANY, LTD. DUAL N-CHANNEL ENHANCEMENT SSRK7002LT1G MODE FIELD EFFECT TRANSISTOR 3 Low On-Resistance Fast Switching Speed 1 Low-voltage drive 2 Easily designed drive circuits SOT-23 Pb-Free Package is available. The suffix G means Pb-free package 3 ESD Protected 1000V Ordering Information(Pb-free) 1 Device Marking Shipping SSRK7002LT1G RS 30... See More ⇒
Detailed specifications: RJU002N06FRA, RJU002N06T106, RJU003N03FRA, RJU003N03T106, RK3055ETL, RK7002AT116, RK7002BM, RK7002BT116, AON7506, RND030N20, RP1A090ZPTR, RP1E050RPTR, RP1E090RPTR, RP1E100RPTR, RQ1A060ZPTR, RQ1A070ZPTR, RQ1E050RPTR
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