RTQ030P02TR Todos los transistores

 ..1. Size:95K  rohm
 rtq030p02tr.pdf

RTQ030P02 Transistor DC-DC Converter (-20V, -3.0A) RTQ030P02 External dimensions (Units mm) Features 1) Low On-resistance.(110m at 2.5V) 2) High Power Package. TSMT6 2.8 3) High speed switching. 1.6 4) Low voltage drive.(2.5V) Each lead has same dimensions Abbreviatedsymbol TS Applications DC-DC converter Equivalent circuit Structure Silicon P-channe

 9.1. Size:53K  rohm
 rtq035n03tr.pdf

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 3) Low voltage drive (2.5V drive). (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions

 9.2. Size:55K  rohm
 rtq035n03.pdf

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 3) Low voltage drive (2.5V drive). (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions

 9.3. Size:1036K  rohm
 rtq035p02fha.pdf

RTQ035P02FHA RTQ035P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ035P02FHA RTQ035P02 External dimensions (Unit mm) Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0 0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive.(2.5

 9.4. Size:94K  rohm
 rtq035p02tr.pdf

RTQ035P02 Transistor DC-DC Converter (-20V, -3.5A) RTQ035P02 External dimensions (Units mm) Features 1) Low On-resistance.(80m at 2.5V) 2) High Power Package. TSMT6 2.8 3) High speed switching. 1.6 4) Low voltage drive.(2.5V) Each lead has same dimensions Abbreviatedsymbol TL Applications DC-DC converter Equivalent circuit Structure Silicon P-channel

 9.5. Size:913K  rohm
 rtq035n03fra.pdf

RTQ035N03FRA RTQ035N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTQ035N03FRA RTQ035N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 3) Low voltage drive (2.5V drive). (1) (2) (3) 1pin mark