RTQ030P02TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RTQ030P02TR
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: TSMT6
Búsqueda de reemplazo de RTQ030P02TR MOSFET
RTQ030P02TR Datasheet (PDF)
rtq030p02tr.pdf

RTQ030P02 Transistor DC-DC Converter (-20V, -3.0A) RTQ030P02 External dimensions (Units : mm) Features 1) Low On-resistance.(110m at 2.5V) 2) High Power Package. TSMT62.83) High speed switching. 1.64) Low voltage drive.(2.5V) Each lead has same dimensionsAbbreviatedsymbol : TS Applications DC-DC converter Equivalent circuit Structure Silicon P-channe
rtq035n03tr.pdf

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions
rtq035n03.pdf

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions
rtq035p02fha.pdf

RTQ035P02FHARTQ035P02TransistorAEC-Q101 Qualified2.5V Drive Pch MOS FET RTQ035P02FHARTQ035P02 External dimensions (Unit : mm) StructureSilicon P-channel MOSFETTSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive.(2.5
Otros transistores... RTL035N03TR , RTM002P02T2L , RTP315N10F7 , RTQ020N03FRA , RTQ020N03TR , RTQ020N05TR , RTQ025P02FRA , RTQ025P02TR , IRF530 , RTQ035N03FRA , RTQ035N03TR , RTQ035P02FHA , RTQ035P02TR , RTQ040P02TR , RTQ045N03FRA , RTQ045N03TR , RTR020N05FRA .
History: OSG60R035HF | LSDN65R380HT | FDS4435-NL | H7P1006MD90TZ | AM7444N | CES2303 | OSG65R290AF
History: OSG60R035HF | LSDN65R380HT | FDS4435-NL | H7P1006MD90TZ | AM7444N | CES2303 | OSG65R290AF



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