All MOSFET. RTQ030P02TR Datasheet

 

RTQ030P02TR Datasheet and Replacement


   Type Designator: RTQ030P02TR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TSMT6
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RTQ030P02TR Datasheet (PDF)

 ..1. Size:95K  rohm
 rtq030p02tr.pdf pdf_icon

RTQ030P02TR

RTQ030P02 Transistor DC-DC Converter (-20V, -3.0A) RTQ030P02 External dimensions (Units : mm) Features 1) Low On-resistance.(110m at 2.5V) 2) High Power Package. TSMT62.83) High speed switching. 1.64) Low voltage drive.(2.5V) Each lead has same dimensionsAbbreviatedsymbol : TS Applications DC-DC converter Equivalent circuit Structure Silicon P-channe

 9.1. Size:53K  rohm
 rtq035n03tr.pdf pdf_icon

RTQ030P02TR

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions

 9.2. Size:55K  rohm
 rtq035n03.pdf pdf_icon

RTQ030P02TR

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions

 9.3. Size:1036K  rohm
 rtq035p02fha.pdf pdf_icon

RTQ030P02TR

RTQ035P02FHARTQ035P02TransistorAEC-Q101 Qualified2.5V Drive Pch MOS FET RTQ035P02FHARTQ035P02 External dimensions (Unit : mm) StructureSilicon P-channel MOSFETTSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive.(2.5

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History: TK2P60D | IRFBG20

Keywords - RTQ030P02TR MOSFET datasheet

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