SIR401DP Todos los transistores

 ..1. Size:518K  vishay
 sir401dp.pdf

New Product SiR401DP Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.0032 at VGS = - 10 V - 50 100% Rg and UIS Tested - 20 0.0042 at VGS = - 4.5 V - 50 97 nC Compliant to RoHS Directive 2002/95/EC 0.0077 at VGS = -

 9.1. Size:86K  vishay
 sir408dp.pdf

SiR408DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0063 at VGS = 10 V TrenchFET Power MOSFET 50a 25 9.3 nC 100 % Rg Tested 0.008 at VGS = 4.5 V 50a 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIO

 9.2. Size:321K  vishay
 sir402dp.pdf

SiR402DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.006 at VGS = 10 V TrenchFET Power MOSFET 35 30 12 nC 100 % Rg Tested 0.008 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS S

 9.3. Size:337K  vishay
 sir404dp.pdf

New Product SiR404DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.00160 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET 0.00175 at VGS = 4.5 V 20 60 64.5 nC 100 % Rg Tested 0.00225 at VGS = 2.5 V 60 100 % UIS Tested 2.5 V and 3.

 9.4. Size:339K  vishay
 sir406dp.pdf

New Product SiR406DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0038 at VGS = 10 V 40g TrenchFET Gen III Power MOSFET 25 15.8 nC 0.0048 at VGS = 4.5 V 100 % Rg Tested 40g 100 % Avalanche Tested Compliant to RoHS Directive 2002/9

 9.5. Size:358K  vishay
 sir403edp.pdf

New Product SiR403EDP Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switch applications VDS (V) RDS(on) ( ) Max. IDa, e Qg (Typ.) Extremely low RDS(on) 0.0065 at VGS = - 10 V - 40 TrenchFET Power MOSFET 100 % Rg and UIS Tested 0.0082 at VGS = - 6 V - 40 66 nC - 30 Typical ESD Performan