SIR401DP PDF and Equivalents Search

 

SIR401DP Specs and Replacement

Type Designator: SIR401DP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 1120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: SO-8

SIR401DP substitution

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SIR401DP datasheet

 ..1. Size:518K  vishay
 sir401dp.pdf pdf_icon

SIR401DP

New Product SiR401DP Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.0032 at VGS = - 10 V - 50 100% Rg and UIS Tested - 20 0.0042 at VGS = - 4.5 V - 50 97 nC Compliant to RoHS Directive 2002/95/EC 0.0077 at VGS = -... See More ⇒

 9.1. Size:86K  vishay
 sir408dp.pdf pdf_icon

SIR401DP

SiR408DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0063 at VGS = 10 V TrenchFET Power MOSFET 50a 25 9.3 nC 100 % Rg Tested 0.008 at VGS = 4.5 V 50a 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIO... See More ⇒

 9.2. Size:321K  vishay
 sir402dp.pdf pdf_icon

SIR401DP

SiR402DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.006 at VGS = 10 V TrenchFET Power MOSFET 35 30 12 nC 100 % Rg Tested 0.008 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS S ... See More ⇒

 9.3. Size:337K  vishay
 sir404dp.pdf pdf_icon

SIR401DP

New Product SiR404DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.00160 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET 0.00175 at VGS = 4.5 V 20 60 64.5 nC 100 % Rg Tested 0.00225 at VGS = 2.5 V 60 100 % UIS Tested 2.5 V and 3.... See More ⇒

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Detailed specifications: SIJ800DP, SIR158DP, SIR166DP, SIR168DP, SIR172ADP, SIR172DP, SIR316DP, SIR330DP, IRFB4110, SIR402DP, SIR403EDP, SIR404DP, SIR406DP, SIR408DP, SIR410DP, SIR412DP, SIR414DP

Keywords - SIR401DP MOSFET specs

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