SIRA14DP Todos los transistores

 ..1. Size:507K  vishay
 sira14dp.pdf

New Product SiRA14DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.00510 at VGS = 10 V Material categorization 20 30 9.4 nC For definitions of compliance please see 0.00850 at VGS = 4.5 V 20 www.vishay.com/doc?99912 PowerPAK SO-8

 8.1. Size:240K  vishay
 sira14bdp.pdf

SiRA14BDP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 100 % Rg and UIS tested D 6 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S D APPLICATIONS 3 S 4 S 1 High power density DC/DC G Top View Bottom View Syn

 9.1. Size:418K  vishay
 sira10bdp.pdf

SiRA10BDP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 100 % Rg and UIS tested D 6 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S APPLICATIONS D 3 S 4 S 1 High power density DC/DC G Top View Bottom View Syn

 9.2. Size:199K  vishay
 sira12dp.pdf

New Product SiRA12DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) Definition TrenchFET Gen IV Power MOSFET 0.0043 at VGS = 10 V 25 30 13.6 nC 100 % Rg and UIS Tested 0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/EC APPLICAT

 9.3. Size:415K  vishay
 sira12bdp.pdf

SiRA12BDP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 100 % Rg and UIS tested D 6 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S APPLICATIONS D 3 S 4 S 1 High power density DC/DC G Top View Bottom View Syn

 9.4. Size:203K  vishay
 sira10dp.pdf

New Product SiRA10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.0037 at VGS = 10 V 30g Material categorization 30 15.4 nC For definitions of compliance please see 0.0050 at VGS = 4.5 V 30g www.vishay.com/doc?99912 APPLICATIONS

 9.5. Size:377K  vishay
 sira18adp.pdf

SiRA18ADP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested 0.0087 at VGS = 10 V 30.6 30 6.9 nC Material categorization 0.0135 at VGS = 4.5 V 24.5 for definitions of compliance please see PowerPAK SO-8 Single www.vishay.com/do

 9.6. Size:507K  vishay
 sira18dp.pdf

New Product SiRA18DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0075 at VGS = 10 V Material categorization 33 30 6.9 nC For definitions of compliance please see 0.0120 at VGS = 4.5 V 20.3 www.vishay.com/doc?99912 PowerPAK SO-8 APP