SIRA14DP Specs and Replacement

Type Designator: SIRA14DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 19.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 445 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm

Package: SO-8

SIRA14DP substitution

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SIRA14DP datasheet

 ..1. Size:507K  vishay
sira14dp.pdf pdf_icon

SIRA14DP

New Product SiRA14DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.00510 at VGS = 10 V Material categorization 20 30 9.4 nC For definitions of compliance please see 0.00850 at VGS = 4.5 V 20 www.vishay.com/doc?99912 PowerPAK SO-8 ... See More ⇒

 8.1. Size:240K  vishay
sira14bdp.pdf pdf_icon

SIRA14DP

SiRA14BDP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 100 % Rg and UIS tested D 6 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S D APPLICATIONS 3 S 4 S 1 High power density DC/DC G Top View Bottom View Syn... See More ⇒

 9.1. Size:418K  vishay
sira10bdp.pdf pdf_icon

SIRA14DP

SiRA10BDP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 100 % Rg and UIS tested D 6 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 2 S APPLICATIONS D 3 S 4 S 1 High power density DC/DC G Top View Bottom View Syn... See More ⇒

 9.2. Size:199K  vishay
sira12dp.pdf pdf_icon

SIRA14DP

New Product SiRA12DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) Definition TrenchFET Gen IV Power MOSFET 0.0043 at VGS = 10 V 25 30 13.6 nC 100 % Rg and UIS Tested 0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/EC APPLICAT... See More ⇒

Detailed specifications: SIR890DP, SIR892DP, SIRA00DP, SIRA02DP, SIRA04DP, SIRA06DP, SIRA10DP, SIRA12DP, AOD4184A, SIRA18DP, APT1001R6BFLLG, APT1001R6SFLLG, APT1001RSVFR, APT1001RSVRG, APT10026L2FLLG, APT1002R4BNR, APT1002RBNR

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