APT10040B2VFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT10040B2VFRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 715 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: TO-247
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APT10040B2VFRG Datasheet (PDF)
apt10040b2vfrg apt10040lvfrg.pdf

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRFREDFETPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identica
apt10040b2vfr.pdf

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical
apt10040b2vr.pdf

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
apt10040lvr.pdf

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
Otros transistores... APT10035LFLLG , APT10035LLLG , APT1003RBFLLG , APT1003RBLLG , APT1003RKFLLG , APT1003RKLLG , APT1003RSFLLG , APT1003RSLLG , IRF630 , APT10040LVFRG , APT10040LVR , APT10045B2FLLG , APT10045B2LLG , APT10045LFLLG , APT10045LLLG , APT1004RBNR , APT10050B2VFRG .
History: SRM6N60D1 | NCEP01T18T | NDH8302P | PJM2302NSA-S | IPP048N04 | ZXMP10A16K
History: SRM6N60D1 | NCEP01T18T | NDH8302P | PJM2302NSA-S | IPP048N04 | ZXMP10A16K



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