APT10040B2VFRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT10040B2VFRG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 715 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO-247

 Búsqueda de reemplazo de APT10040B2VFRG MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT10040B2VFRG datasheet

 ..1. Size:76K  apt
 apt10040b2vfrg apt10040lvfrg.pdf pdf_icon

APT10040B2VFRG

APT10040B2VFR APT10040LVFR 1000V 25A 0.400W B2VFR FREDFET POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identica

 1.1. Size:39K  apt
 apt10040b2vfr.pdf pdf_icon

APT10040B2VFRG

APT10040B2VFR APT10040LVFR 1000V 25A 0.400W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

 3.1. Size:37K  apt
 apt10040b2vr.pdf pdf_icon

APT10040B2VFRG

APT10040B2VR APT10040LVR 1000V 25A 0.400W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati

 6.1. Size:75K  apt
 apt10040lvr.pdf pdf_icon

APT10040B2VFRG

APT10040B2VR APT10040LVR 1000V 25A 0.400W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati

MOSTRAR MÁS

Otros transistores... APT10035LFLLG, APT10035LLLG, APT1003RBFLLG, APT1003RBLLG, APT1003RKFLLG, APT1003RKLLG, APT1003RSFLLG, APT1003RSLLG, IRF640N, APT10040LVFRG, APT10040LVR, APT10045B2FLLG, APT10045B2LLG, APT10045LFLLG, APT10045LLLG, APT1004RBNR, APT10050B2VFRG