APT10040B2VFRG Specs and Replacement
Type Designator: APT10040B2VFRG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 715 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-247
APT10040B2VFRG substitution
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APT10040B2VFRG datasheet
apt10040b2vfrg apt10040lvfrg.pdf
APT10040B2VFR APT10040LVFR 1000V 25A 0.400W B2VFR FREDFET POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identica... See More ⇒
apt10040b2vfr.pdf
APT10040B2VFR APT10040LVFR 1000V 25A 0.400W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical... See More ⇒
apt10040b2vr.pdf
APT10040B2VR APT10040LVR 1000V 25A 0.400W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati... See More ⇒
apt10040lvr.pdf
APT10040B2VR APT10040LVR 1000V 25A 0.400W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati... See More ⇒
Detailed specifications: APT10035LFLLG, APT10035LLLG, APT1003RBFLLG, APT1003RBLLG, APT1003RKFLLG, APT1003RKLLG, APT1003RSFLLG, APT1003RSLLG, IRF640N, APT10040LVFRG, APT10040LVR, APT10045B2FLLG, APT10045B2LLG, APT10045LFLLG, APT10045LLLG, APT1004RBNR, APT10050B2VFRG
Keywords - APT10040B2VFRG MOSFET specs
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