Справочник MOSFET. APT10040B2VFRG

 

APT10040B2VFRG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT10040B2VFRG
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 715 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для APT10040B2VFRG

   - подбор ⓘ MOSFET транзистора по параметрам

 

APT10040B2VFRG Datasheet (PDF)

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apt10040b2vfrg apt10040lvfrg.pdfpdf_icon

APT10040B2VFRG

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRFREDFETPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identica

 1.1. Size:39K  apt
apt10040b2vfr.pdfpdf_icon

APT10040B2VFRG

APT10040B2VFRAPT10040LVFR1000V 25A 0.400WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

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apt10040b2vr.pdfpdf_icon

APT10040B2VFRG

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

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apt10040lvr.pdfpdf_icon

APT10040B2VFRG

APT10040B2VRAPT10040LVR1000V 25A 0.400WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati

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History: STD120N4F6 | FQAF28N15 | CS8N70FA9H2-G | CS8N80A8H | STP14NM50N

 

 
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