APT10M09LVFRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT10M09LVFRG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 3940 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO-264

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APT10M09LVFRG datasheet

 ..1. Size:146K  apt
 apt10m09lvfrg.pdf pdf_icon

APT10M09LVFRG

APT10M09B2VFR APT10M09LVFR 100V 100A 0.009 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layou

 2.1. Size:255K  inchange semiconductor
 apt10m09lvfr.pdf pdf_icon

APT10M09LVFRG

isc N-Channel MOSFET Transistor APT10M09LVFR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.009 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 6.1. Size:38K  apt
 apt10m09b2vr.pdf pdf_icon

APT10M09LVFRG

APT10M09B2VR APT10M09LVR 100V 100A 0.009W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati

 6.2. Size:39K  apt
 apt10m09b2vfr.pdf pdf_icon

APT10M09LVFRG

APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

MOSTRAR MÁS

Otros transistores... APT10090BFLLG, APT10090BLLG, APT10090SFLLG, APT10090SLLG, APT100F50J, APT100M50J, APT106N60B2C6, APT10M07JVFR, AO3401, APT10M11B2VFRG, APT10M11JVFR, APT10M11LVFRG, APT10M19BVFRG, APT10M19BVRG, APT10M19SVFR, APT10M19SVFRG, APT11F80B