APT10M09LVFRG Datasheet. Specs and Replacement

Type Designator: APT10M09LVFRG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 3940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-264

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APT10M09LVFRG datasheet

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APT10M09LVFRG

APT10M09B2VFR APT10M09LVFR 100V 100A 0.009 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layou... See More ⇒

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APT10M09LVFRG

isc N-Channel MOSFET Transistor APT10M09LVFR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.009 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

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APT10M09LVFRG

APT10M09B2VR APT10M09LVR 100V 100A 0.009W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati... See More ⇒

 6.2. Size:39K  apt
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APT10M09LVFRG

APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical... See More ⇒

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Detailed specifications: APT10090BFLLG, APT10090BLLG, APT10090SFLLG, APT10090SLLG, APT100F50J, APT100M50J, APT106N60B2C6, APT10M07JVFR, BS170, APT10M11B2VFRG, APT10M11JVFR, APT10M11LVFRG, APT10M19BVFRG, APT10M19BVRG, APT10M19SVFR, APT10M19SVFRG, APT11F80B

Keywords - APT10M09LVFRG MOSFET specs

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