APT10M09LVFRG MOSFET Datasheet: N-Ch, 100V, 100A. Full specification with pinout and replacement list

APT10M09LVFRG Specs and Replacement

   Type Designator: APT10M09LVFRG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 3940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-264

APT10M09LVFRG substitution

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APT10M09LVFRG datasheet

..1. Size:146K apt
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APT10M09B2VFR APT10M09LVFR 100V 100A 0.009 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layou... See More ⇒

2.1. Size:255K inchange semiconductor
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isc N-Channel MOSFET Transistor APT10M09LVFR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.009 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

6.1. Size:38K apt
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APT10M09B2VR APT10M09LVR 100V 100A 0.009W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati... See More ⇒

6.2. Size:39K apt
apt10m09b2vfr.pdf pdf_icon

APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical... See More ⇒