APT10M09LVFRG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT10M09LVFRG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 36 ns
Cossⓘ - Выходная емкость: 3940 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: TO-264
APT10M09LVFRG Datasheet (PDF)
apt10m09lvfrg.pdf

APT10M09B2VFRAPT10M09LVFR100V 100A 0.009B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layou
apt10m09lvfr.pdf

isc N-Channel MOSFET Transistor APT10M09LVFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.009(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
apt10m09b2vr.pdf

APT10M09B2VRAPT10M09LVR100V 100A 0.009WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specificati
apt10m09b2vfr.pdf

APT10M09B2VFRAPT10M09LVFR100V 100A 0.009WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical
Другие MOSFET... APT10090BFLLG , APT10090BLLG , APT10090SFLLG , APT10090SLLG , APT100F50J , APT100M50J , APT106N60B2C6 , APT10M07JVFR , AO3400 , APT10M11B2VFRG , APT10M11JVFR , APT10M11LVFRG , APT10M19BVFRG , APT10M19BVRG , APT10M19SVFR , APT10M19SVFRG , APT11F80B .
History: SDF130JAB-U | TDM3478 | IXTY2R4N50P
History: SDF130JAB-U | TDM3478 | IXTY2R4N50P



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