APT10M11LVFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT10M11LVFRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 520 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 300 nC
Tiempo de subida (tr): 33 nS
Conductancia de drenaje-sustrato (Cd): 3200 pF
Resistencia entre drenaje y fuente RDS(on): 0.011 Ohm
Paquete / Cubierta: TO-264
Búsqueda de reemplazo de MOSFET APT10M11LVFRG
APT10M11LVFRG Datasheet (PDF)
apt10m11b2vfrg apt10m11lvfrg.pdf
APT10M11B2VFRAPT10M11LVFR100V 100A 0.011WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical
apt10m11lvr.pdf
APT10M11LVR100V 100A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low
apt10m11jvr.pdf
APT10M11JVR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche
apt10m11b2vr.pdf
APT10M11B2VR100V 100A 0.011POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L
apt10m11jvfr.pdf
APT10M11JVFR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switchi
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