APT10M11LVFRG. Аналоги и основные параметры

Наименование производителя: APT10M11LVFRG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 520 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 33 ns

Cossⓘ - Выходная емкость: 3200 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm

Тип корпуса: TO-264

Аналог (замена) для APT10M11LVFRG

- подборⓘ MOSFET транзистора по параметрам

 

APT10M11LVFRG даташит

 ..1. Size:64K  apt
 apt10m11b2vfrg apt10m11lvfrg.pdf pdf_icon

APT10M11LVFRG

APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

 4.1. Size:65K  apt
 apt10m11lvr.pdf pdf_icon

APT10M11LVFRG

APT10M11LVR 100V 100A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

 6.1. Size:70K  apt
 apt10m11jvr.pdf pdf_icon

APT10M11LVFRG

APT10M11JVR 100V 144A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 6.2. Size:63K  apt
 apt10m11b2vr.pdf pdf_icon

APT10M11LVFRG

APT10M11B2VR 100V 100A 0.011 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

ПОКАЗАТЬ ЕЩЁ

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