APT10M11LVFRG Specs and Replacement

Type Designator: APT10M11LVFRG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 3200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-264

APT10M11LVFRG substitution

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APT10M11LVFRG datasheet

 ..1. Size:64K  apt
 apt10m11b2vfrg apt10m11lvfrg.pdf pdf_icon

APT10M11LVFRG

APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical... See More ⇒

 4.1. Size:65K  apt
 apt10m11lvr.pdf pdf_icon

APT10M11LVFRG

APT10M11LVR 100V 100A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low... See More ⇒

 6.1. Size:70K  apt
 apt10m11jvr.pdf pdf_icon

APT10M11LVFRG

APT10M11JVR 100V 144A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche... See More ⇒

 6.2. Size:63K  apt
 apt10m11b2vr.pdf pdf_icon

APT10M11LVFRG

APT10M11B2VR 100V 100A 0.011 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L... See More ⇒

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Detailed specifications: APT10090SLLG, APT100F50J, APT100M50J, APT106N60B2C6, APT10M07JVFR, APT10M09LVFRG, APT10M11B2VFRG, APT10M11JVFR, 4435, APT10M19BVFRG, APT10M19BVRG, APT10M19SVFR, APT10M19SVFRG, APT11F80B, APT11F80S, APT11N80BC3G, APT11N80KC3G

Keywords - APT10M11LVFRG MOSFET specs

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 APT10M11LVFRG replacement

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