All MOSFET. APT10M11LVFRG Datasheet

 

APT10M11LVFRG MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT10M11LVFRG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 300 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 3200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-264

 APT10M11LVFRG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10M11LVFRG Datasheet (PDF)

 ..1. Size:64K  apt
 apt10m11b2vfrg apt10m11lvfrg.pdf

APT10M11LVFRG APT10M11LVFRG

APT10M11B2VFRAPT10M11LVFR100V 100A 0.011WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

 4.1. Size:65K  apt
 apt10m11lvr.pdf

APT10M11LVFRG APT10M11LVFRG

APT10M11LVR100V 100A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

 6.1. Size:70K  apt
 apt10m11jvr.pdf

APT10M11LVFRG APT10M11LVFRG

APT10M11JVR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.2. Size:63K  apt
 apt10m11b2vr.pdf

APT10M11LVFRG APT10M11LVFRG

APT10M11B2VR100V 100A 0.011POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 6.3. Size:118K  apt
 apt10m11jvfr.pdf

APT10M11LVFRG APT10M11LVFRG

APT10M11JVFR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switchi

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BF513

 

 
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