APT11N80BC3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT11N80BC3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 770 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO-247

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APT11N80BC3G datasheet

 ..1. Size:158K  apt
 apt11n80bc3g.pdf pdf_icon

APT11N80BC3G

APT11N80BC3 800V 11A 0.45 Super Junction MOSFET TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-247 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80BC3 UNIT VDSS Drain-Source Voltage 800 Volts ID

 ..2. Size:376K  inchange semiconductor
 apt11n80bc3g.pdf pdf_icon

APT11N80BC3G

isc N-Channel MOSFET Transistor APT11N80BC3G FEATURES Drain Current I =11A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.45 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 3.1. Size:157K  apt
 apt11n80bc3.pdf pdf_icon

APT11N80BC3G

APT11N80BC3 800V 11A 0.45 Super Junction MOSFET TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-247 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80BC3 UNIT VDSS Drain-Source Voltage 800 Volts ID

 6.1. Size:157K  apt
 apt11n80kc3.pdf pdf_icon

APT11N80BC3G

APT11N80KC3 800V 11A 0.450 Super Junction MOSFET TO-220 COOLMOS Power Semiconductors Ultra low RDS(ON) G D S Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-220 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80KC3 UNIT VDSS Drain-Source Voltage 800

MOSTRAR MÁS

Otros transistores... APT10M11JVFR, APT10M11LVFRG, APT10M19BVFRG, APT10M19BVRG, APT10M19SVFR, APT10M19SVFRG, APT11F80B, APT11F80S, 5N65, APT11N80KC3G, APT1201R2BFLLG, APT1201R2SFLLG, APT1201R4BFLL, APT1201R4SFLL, APT1201R5BVFRG, APT1201R5SVFRG, APT1201R6BVFRG