APT11N80BC3G Todos los transistores

 

APT11N80BC3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT11N80BC3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO-247
 

 Búsqueda de reemplazo de APT11N80BC3G MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT11N80BC3G Datasheet (PDF)

 ..1. Size:158K  apt
 apt11n80bc3g.pdf pdf_icon

APT11N80BC3G

APT11N80BC3800V 11A 0.45Super Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80BC3 UNITVDSS Drain-Source Voltage800 VoltsID

 ..2. Size:376K  inchange semiconductor
 apt11n80bc3g.pdf pdf_icon

APT11N80BC3G

isc N-Channel MOSFET Transistor APT11N80BC3GFEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.45(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 3.1. Size:157K  apt
 apt11n80bc3.pdf pdf_icon

APT11N80BC3G

APT11N80BC3800V 11A 0.45Super Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80BC3 UNITVDSS Drain-Source Voltage800 VoltsID

 6.1. Size:157K  apt
 apt11n80kc3.pdf pdf_icon

APT11N80BC3G

APT11N80KC3800V 11A 0.450Super Junction MOSFETTO-220COOLMOSPower Semiconductors Ultra low RDS(ON)GDS Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-220 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80KC3 UNITVDSS Drain-Source Voltage800

MOSTRAR MÁS

Otros transistores... APT10M11JVFR , APT10M11LVFRG , APT10M19BVFRG , APT10M19BVRG , APT10M19SVFR , APT10M19SVFRG , APT11F80B , APT11F80S , 5N65 , APT11N80KC3G , APT1201R2BFLLG , APT1201R2SFLLG , APT1201R4BFLL , APT1201R4SFLL , APT1201R5BVFRG , APT1201R5SVFRG , APT1201R6BVFRG .

 

 
Back to Top

 


 
.