APT11N80BC3G Specs and Replacement

Type Designator: APT11N80BC3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 770 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO-247

APT11N80BC3G substitution

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APT11N80BC3G datasheet

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 apt11n80bc3g.pdf pdf_icon

APT11N80BC3G

APT11N80BC3 800V 11A 0.45 Super Junction MOSFET TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-247 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80BC3 UNIT VDSS Drain-Source Voltage 800 Volts ID ... See More ⇒

 ..2. Size:376K  inchange semiconductor
 apt11n80bc3g.pdf pdf_icon

APT11N80BC3G

isc N-Channel MOSFET Transistor APT11N80BC3G FEATURES Drain Current I =11A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.45 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 3.1. Size:157K  apt
 apt11n80bc3.pdf pdf_icon

APT11N80BC3G

APT11N80BC3 800V 11A 0.45 Super Junction MOSFET TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-247 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80BC3 UNIT VDSS Drain-Source Voltage 800 Volts ID ... See More ⇒

 6.1. Size:157K  apt
 apt11n80kc3.pdf pdf_icon

APT11N80BC3G

APT11N80KC3 800V 11A 0.450 Super Junction MOSFET TO-220 COOLMOS Power Semiconductors Ultra low RDS(ON) G D S Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-220 Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT11N80KC3 UNIT VDSS Drain-Source Voltage 800 ... See More ⇒

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Detailed specifications: APT10M11JVFR, APT10M11LVFRG, APT10M19BVFRG, APT10M19BVRG, APT10M19SVFR, APT10M19SVFRG, APT11F80B, APT11F80S, 5N65, APT11N80KC3G, APT1201R2BFLLG, APT1201R2SFLLG, APT1201R4BFLL, APT1201R4SFLL, APT1201R5BVFRG, APT1201R5SVFRG, APT1201R6BVFRG

Keywords - APT11N80BC3G MOSFET specs

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