RF1S22N10SM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S22N10SM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: TO263AB
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RF1S22N10SM Datasheet (PDF)
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RFP22N10, RF1S22N10SMData Sheet January 2002 File Number 2385.322A, 100V, 0.080 Ohm, N-Channel Power FeaturesMOSFETs 22A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse)sizes approaching those of LSI integrated circuits gives optimum utilization of
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RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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