RFP22N10, RF1S22N10SMData Sheet January 2002 File Number 2385.322A, 100V, 0.080 Ohm, N-Channel Power FeaturesMOSFETs 22A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse)sizes approaching those of LSI integrated circuits gives optimum utilization of

RFP25N06, RF1S25N06,S E M I C O N D U C T O RRF1S25N06SM25A, 60V, Avalanche Rated N-ChannelEnhancement-Mode Power MOSFETsDecember 1995Features PackagesJEDEC TO-220AB 25A, 60VSOURCEDRAINGATE rDS(ON) = 0.047 Temperature Compensating PSPICE Model Peak Current vs Pulse Width CurveDRAIN UIS Rating Curve (FLANGE) +175oC Operating TemperatureJED

RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili