RF1S22N10SM Datasheet and Replacement
Type Designator: RF1S22N10SM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO263AB
RF1S22N10SM substitution
RF1S22N10SM Datasheet (PDF)
rfp22n10 rf1s22n10sm.pdf

RFP22N10, RF1S22N10SMData Sheet January 2002 File Number 2385.322A, 100V, 0.080 Ohm, N-Channel Power FeaturesMOSFETs 22A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse)sizes approaching those of LSI integrated circuits gives optimum utilization of
rf1s25n06.pdf

RFP25N06, RF1S25N06,S E M I C O N D U C T O RRF1S25N06SM25A, 60V, Avalanche Rated N-ChannelEnhancement-Mode Power MOSFETsDecember 1995Features PackagesJEDEC TO-220AB 25A, 60VSOURCEDRAINGATE rDS(ON) = 0.047 Temperature Compensating PSPICE Model Peak Current vs Pulse Width CurveDRAIN UIS Rating Curve (FLANGE) +175oC Operating TemperatureJED
rfp25n06 rf1s25n06sm.pdf

RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili
Datasheet: RF1K49093 , RF1K49154 , RF1K49156 , RF1K49157 , RF1K49211 , RF1K49221 , RF1K49223 , RF1K49224 , 2N7000 , RF1S25N06SM , RF1S30N06LESM , RF1S30P05SM , RF1S30P06SM , RF1S40N10LESM , RF1S40N10SM , RF1S45N06LESM , RF1S45N06SM .
History: 2SK3666 | FDP3672 | STU15L01 | STM4432
Keywords - RF1S22N10SM MOSFET datasheet
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History: 2SK3666 | FDP3672 | STU15L01 | STM4432



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