RF1S22N10SM Specs and Replacement
Type Designator: RF1S22N10SM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO263AB
RF1S22N10SM substitution
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RF1S22N10SM datasheet
rfp22n10 rf1s22n10sm.pdf
RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power Features MOSFETs 22A, 100V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080 the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse) sizes approaching those of LSI integrated circuits gives optimum utilization of ... See More ⇒
rf1s25n06.pdf
RFP25N06, RF1S25N06, S E M I C O N D U C T O R RF1S25N06SM 25A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB 25A, 60V SOURCE DRAIN GATE rDS(ON) = 0.047 Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve DRAIN UIS Rating Curve (FLANGE) +175oC Operating Temperature JED... See More ⇒
rfp25n06 rf1s25n06sm.pdf
RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power Features MOSFETs 25A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili... See More ⇒
Detailed specifications: RF1K49093, RF1K49154, RF1K49156, RF1K49157, RF1K49211, RF1K49221, RF1K49223, RF1K49224, BS170, RF1S25N06SM, RF1S30N06LESM, RF1S30P05SM, RF1S30P06SM, RF1S40N10LESM, RF1S40N10SM, RF1S45N06LESM, RF1S45N06SM
Keywords - RF1S22N10SM MOSFET specs
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