RF1S22N10SM
MOSFET. Datasheet pdf. Equivalent
Type Designator: RF1S22N10SM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 22
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
TO263AB
RF1S22N10SM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RF1S22N10SM
Datasheet (PDF)
..1. Size:364K fairchild semi
rfp22n10 rf1s22n10sm.pdf 
RFP22N10, RF1S22N10SMData Sheet January 2002 File Number 2385.322A, 100V, 0.080 Ohm, N-Channel Power FeaturesMOSFETs 22A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.080the MegaFET process. This process, which uses feature UIS SOA Rating Curve (Single Pulse)sizes approaching those of LSI integrated circuits gives optimum utilization of
9.1. Size:82K harris semi
rf1s25n06.pdf
RFP25N06, RF1S25N06,S E M I C O N D U C T O RRF1S25N06SM25A, 60V, Avalanche Rated N-ChannelEnhancement-Mode Power MOSFETsDecember 1995Features PackagesJEDEC TO-220AB 25A, 60VSOURCEDRAINGATE rDS(ON) = 0.047 Temperature Compensating PSPICE Model Peak Current vs Pulse Width CurveDRAIN UIS Rating Curve (FLANGE) +175oC Operating TemperatureJED
9.2. Size:106K intersil
rfp25n06 rf1s25n06sm.pdf
RFP25N06, RF1S25N06SMData Sheet July 1999 File Number 1492.425A, 60V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 25A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits givesoptimum utilization of sili
Datasheet: RF1K49093
, RF1K49154
, RF1K49156
, RF1K49157
, RF1K49211
, RF1K49221
, RF1K49223
, RF1K49224
, 4435
, RF1S25N06SM
, RF1S30N06LESM
, RF1S30P05SM
, RF1S30P06SM
, RF1S40N10LESM
, RF1S40N10SM
, RF1S45N06LESM
, RF1S45N06SM
.
