2SK1221 Todos los transistores

 ..1. Size:249K  1
 2sk1221.pdf

FUJI POWER MOSFET 2SK1221 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maximum ra

 8.1. Size:34K  panasonic
 2sk1228.pdf

Silicon MOS FETs (Small Signal) 2SK1228 2SK1228 Silicon N-Channel MOS Unit mm For switching +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching 1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible 2 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 0.1 to 0.3 Drain-Source voltage VDS 50 V 0.4

 8.2. Size:89K  no
 2sk1225 2sk1206.pdf

 8.3. Size:61K  inchange semiconductor
 2sk1222.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1222 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltag

 8.4. Size:63K  inchange semiconductor
 2sk1224.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1224 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage