2SK1221 Spec and Replacement
Type Designator: 2SK1221
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220AB
2SK1221 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1221 Specs
2sk1221.pdf
FUJI POWER MOSFET 2SK1221 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC TO-220AB EIAJ SC-46 Equivalent circuit schematic Maximum ra... See More ⇒
2sk1228.pdf
Silicon MOS FETs (Small Signal) 2SK1228 2SK1228 Silicon N-Channel MOS Unit mm For switching +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching 1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible 2 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 0.1 to 0.3 Drain-Source voltage VDS 50 V 0.4... See More ⇒
2sk1222.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1222 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltag... See More ⇒
Detailed specifications: 2SK1186 , 2SK1187 , 2SK1188 , 2SK1189 , 2SK1190 , 2SK1191 , 2SK1192 , 2SK1198 , AO3401 , 2SK1271 , 2SK1272 , 2SK1273 , 2SK1274 , 2SK1282 , 2SK1283 , 2SK1284 , 2SK1285 .
History: TF3404
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