APT18F60S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT18F60S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 335 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 325 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.37 Ohm
Encapsulados: D3PAK
Búsqueda de reemplazo de APT18F60S MOSFET
- Selecciónⓘ de transistores por parámetros
APT18F60S datasheet
apt18f60b apt18f60s.pdf
APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt18f60b.pdf
isc N-Channel MOSFET Transistor APT18F60B FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt18m100b apt18m100s.pdf
APT18M100B APT18M100S 1000V, 18A, 0.70 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance
apt18m80b apt18m80s.pdf
APT18M80B APT18M80S 800V, 19A, 0.53 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of
Otros transistores... APT17F120J, APT17F80B, APT17F80S, APT17M120JCU2, APT17M120JCU3, APT17N80BC3G, APT17N80SC3G, APT18F60B, IRF740, APT18M100B, APT18M100S, APT18M80B, APT18M80S, APT19F100J, APT19M120J, APT20F50B, APT20F50S
History: STN484D
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2n3904 transistor equivalent | 2sc2312 | bu406 datasheet | irfb7437 | tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50
