APT18F60S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT18F60S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 335 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 23 ns
Cossⓘ - Выходная емкость: 325 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.37 Ohm
Тип корпуса: D3PAK
Аналог (замена) для APT18F60S
APT18F60S Datasheet (PDF)
apt18f60b apt18f60s.pdf

APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt18f60b.pdf

isc N-Channel MOSFET Transistor APT18F60BFEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt18m100b apt18m100s.pdf

APT18M100B APT18M100S 1000V, 18A, 0.70 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance
apt18m80b apt18m80s.pdf

APT18M80B APT18M80S 800V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of
Другие MOSFET... APT17F120J , APT17F80B , APT17F80S , APT17M120JCU2 , APT17M120JCU3 , APT17N80BC3G , APT17N80SC3G , APT18F60B , IRF740 , APT18M100B , APT18M100S , APT18M80B , APT18M80S , APT19F100J , APT19M120J , APT20F50B , APT20F50S .
History: ZXMN3B04N8 | 2SK2967 | WFP4N60 | BUK9Y11-30B | MDP10N60GTH | STW5NK100Z
History: ZXMN3B04N8 | 2SK2967 | WFP4N60 | BUK9Y11-30B | MDP10N60GTH | STW5NK100Z



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