APT18F60S Specs and Replacement
Type Designator: APT18F60S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 335 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 325 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
Package: D3PAK
APT18F60S substitution
- MOSFET ⓘ Cross-Reference Search
APT18F60S datasheet
apt18f60b apt18f60s.pdf
APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo... See More ⇒
apt18f60b.pdf
isc N-Channel MOSFET Transistor APT18F60B FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
apt18m100b apt18m100s.pdf
APT18M100B APT18M100S 1000V, 18A, 0.70 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance ... See More ⇒
apt18m80b apt18m80s.pdf
APT18M80B APT18M80S 800V, 19A, 0.53 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of ... See More ⇒
Detailed specifications: APT17F120J, APT17F80B, APT17F80S, APT17M120JCU2, APT17M120JCU3, APT17N80BC3G, APT17N80SC3G, APT18F60B, IRF740, APT18M100B, APT18M100S, APT18M80B, APT18M80S, APT19F100J, APT19M120J, APT20F50B, APT20F50S
Keywords - APT18F60S MOSFET specs
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History: AOT2610L
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