APT20M11JLL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT20M11JLL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 694 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 176 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 4220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: SOT-227
Búsqueda de reemplazo de APT20M11JLL MOSFET
APT20M11JLL Datasheet (PDF)
apt20m11jll.pdf

APT20M11JLL200V 176A 0.011R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionall
apt20m11jvfr.pdf

APT20M11JVFR200V 175A 0.011POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche
apt20m11jvr.pdf

APT20M11JVR200V 175A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche
apt20m11jfll.pdf

APT20M11JFLL200V 176A 0.011R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin
Otros transistores... APT18M100S , APT18M80B , APT18M80S , APT19F100J , APT19M120J , APT20F50B , APT20F50S , APT20M11JFLL , IRFP260N , APT20M120JCU2 , APT20M120JCU3 , APT20M16B2FLLG , APT20M16B2LLG , APT20M16LFLLG , APT20M16LLLG , APT20M18B2VFRG , APT20M18B2VRG .
History: OSG65R080KT3ZF | CHM5506JGP | STU70N2LH5 | PMCXB900UE | AON6758 | APM2309AC | RSS090P03FU6TB
History: OSG65R080KT3ZF | CHM5506JGP | STU70N2LH5 | PMCXB900UE | AON6758 | APM2309AC | RSS090P03FU6TB



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