APT20M11JLL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT20M11JLL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 694 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 176 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 65 ns
Cossⓘ - Выходная емкость: 4220 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: SOT-227
- подбор MOSFET транзистора по параметрам
APT20M11JLL Datasheet (PDF)
apt20m11jll.pdf

APT20M11JLL200V 176A 0.011R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionall
apt20m11jvfr.pdf

APT20M11JVFR200V 175A 0.011POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche
apt20m11jvr.pdf

APT20M11JVR200V 175A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche
apt20m11jfll.pdf

APT20M11JFLL200V 176A 0.011R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCE15H10 | AO6804A | 2SK3301I | DMTH10H005SCT | WMJ38N60C2 | IPW65R080CFD | IXFT140N10P
History: NCE15H10 | AO6804A | 2SK3301I | DMTH10H005SCT | WMJ38N60C2 | IPW65R080CFD | IXFT140N10P



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