All MOSFET. APT20M11JLL Datasheet

 

APT20M11JLL Datasheet and Replacement


   Type Designator: APT20M11JLL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 694 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 176 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 4220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOT-227
 

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APT20M11JLL Datasheet (PDF)

 ..1. Size:166K  apt
apt20m11jll.pdf pdf_icon

APT20M11JLL

APT20M11JLL200V 176A 0.011R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionall

 5.1. Size:74K  apt
apt20m11jvfr.pdf pdf_icon

APT20M11JLL

APT20M11JVFR200V 175A 0.011POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche

 5.2. Size:74K  apt
apt20m11jvr.pdf pdf_icon

APT20M11JLL

APT20M11JVR200V 175A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 5.3. Size:167K  apt
apt20m11jfll.pdf pdf_icon

APT20M11JLL

APT20M11JFLL200V 176A 0.011R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin

Datasheet: APT18M100S , APT18M80B , APT18M80S , APT19F100J , APT19M120J , APT20F50B , APT20F50S , APT20M11JFLL , IRFP260N , APT20M120JCU2 , APT20M120JCU3 , APT20M16B2FLLG , APT20M16B2LLG , APT20M16LFLLG , APT20M16LLLG , APT20M18B2VFRG , APT20M18B2VRG .

History: MTN7451Q8 | CTD03N005 | IXTH80N20L | AP2864I-A-HF | IXTY1R6N50P | FK330309 | PE506BA

Keywords - APT20M11JLL MOSFET datasheet

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