APT20M20LLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT20M20LLLG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 568 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 2180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: TO-264
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APT20M20LLLG datasheet
apt20m20b2llg apt20m20lllg.pdf
APT20M20B2LL APT20M20LLL 200V 100A 0.020 R POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi
apt20m20b2fllg apt20m20lfllg.pdf
APT20M20B2FLL APT20M20LFLL 200V 100A 0.020 R FREDFET POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching loss
apt20m20lfll.pdf
isc N-Channel MOSFET Transistor APT20M20LFLL FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.02 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p
apt20m20b2fll.pdf
APT20M20B2FLL APT20M20LFLL 200V 100A 0.020W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti
Otros transistores... APT20M16LLLG, APT20M18B2VFRG, APT20M18B2VRG, APT20M18LVFRG, APT20M18LVRG, APT20M20B2FLLG, APT20M20B2LLG, APT20M20LFLLG, IRFP250N, APT20M34BFLLG, APT20M34BLLG, APT20M34SFLLG, APT20M34SLLG, APT20M36BFLLG, APT20M36SFLLG, APT20M38SVFRG, APT20M40HVR
History: APT20M16B2FLLG | SSFN6816
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